c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . sbw13009- sbw13009- sbw13009- sbw13009- o o o o rev.a aug.2010 high voltage fast switching npn power transistor features ? very high switching speed ? high voltage capability ? wide reverse bias soa general description this device is designed for high voltage, high speed switching characteristics required such as lighting system,switching mode power supply. absolute maximum ratings symbol parameter test conditions value units v ces collector -emitter voltage v be =0 700 v v ceo collector -emitter voltage i b =0 400 v v ebo emitter -base voltage i c =0 9.0 v i c collector current 12 a i cp collector pulse current 25 a i b base current 6.0 a i bm base peak current t p =5ms 12 a p c total dissipation at tc=25 110 w t j operation junction temperature -40~150 t stg storage temperature -40~150 thermal characteristics symbol parameter value units r ? jc thermal resistance junction to case 1.13 /w r ? ja thermal resistance junction to ambient 62.5 /w
sbw13009- sbw13009- sbw13009- sbw13009- o o o o 2 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance electrical characteristics symbol parameter test conditions value units min typ max v ceo(sus) collector-emitter breakdown voltage ic=10ma,ib=0 400 - - v v ce(sat) collector-emitter saturation voltage ic=5.0a,ib=1.0a ic=8.0a,ib=1.6a ic=12a,ib=3.0a - - 1.0 1.5 3.0 v ic=8.0a,ib=1.6a tc=100 - - 2.0 v v be(sat) base-emitter saturation voltage ic=5.0a,ib=1.0a ic=8.0a,ib=1.6a - - 1.2 1.6 v ic=8.0a,ib=1.6a tc=100 - - 1.5 v i ebo emitter -base cutoff current veb=9v,ic=0v - - 10 ua hfe dc current gain vce=5v,ic=5.0a vce=5v,ic=8.0a 10 6 - - 40 30 ts storage time v cc =5.0v,ic=0.5a (ui9600) 4 - - 10 0.8 s tf fall time f t current gain band width product vce=10v,ic=0.5a 4 mhz note : pulse test :pulse width 300,duty cycle 2%
sbw13009- sbw13009- sbw13009- sbw13009- o o o o 3 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.1 dc current gain fig.2 collector -emitter saturation voltgae fig.3 base-emitter saturation voltage fig.4 safe operation area fig.5 power derating fig.6 reverse biased safe operation area
sbw13009- sbw13009- sbw13009- sbw13009- o o o o 4 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance resistive load switching test circuit inductive load switching & rbsoa test circuit
sbw13009- sbw13009- sbw13009- sbw13009- o o o o 5 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance to3p(b)package to3p(b)package to3p(b)package to3p(b)package dimension dimension dimension dimension unit :mm
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